Dynamic response and roughening of ferroelectric domain walls driven at planar electrode edges

Understanding and controlling the motion, stability, equilibrium configuration of ferroelectric domain walls is key for their integration into potential nanoelectronic applications, such as racetrack memories. Using piezoresponse force microscopy, we analyze growth roughness domains in epitaxial thin film Pb(Zr0.2Ti0.8)O3, driven by electric fields at straight edges planar electrodes two different temperatures. This device relevant geometry allows us to confirm that are well described one-dimensional monoaffine elastic interfaces random-bond disorder. However, observe a progressive increase initially flat move through disorder landscape, which could prove significant limiting factor racetrack-type memories using ferroelectrics.